* RSD200N10 NMOSFET model
* Date: 2008/01/29
******************D G S
.SUBCKT RSD200N10 1 2 3
M1   11 22 3 3 MOS_N
D1         3 1 DDS
R1        1 11 RTH 29.7m
D2       11 21 DDG
D3       22 21 DDG
R2        2 22 25
.MODEL MOS_N NMOS
+ LEVEL=3
+ L=2.0000E-6
+ W=1
+ KP=183.67E-6
+ RS=10.000E-3
+ RD=0
+ VTO=1.7924
+ RDS=10.000E6
+ TOX=2.0000E-6
+ CGSO=2.1n
+ CGDO=75p
+ CBD=0
+ RG=0
+ N=2
+ RB=1.0000E-3
+ GAMMA=0
+ KAPPA=0
.MODEL DDS D
+ IS=882.85E-12
+ N=1.2109
+ RS=12.489E-3
+ IKF=3.1091
+ CJO=521.77E-12
+ M=.58728
+ VJ=.63853
+ BV=100
+ TT=35n
.MODEL DDG D
+ CJO=1.9109E-9
+ M=1.1609
+ VJ=1.0955
.MODEL RTH RES
+ TC1=0.006
+ TC2=0.00001
.ENDS RSD200N10