* SP8M65_P PMOSFET model
* Model Generated by ROHM
* All Rights Reserved
* Commercial Use or Resale Restricted
* Date: 2008/10/06
*****************D G S
.SUBCKT SP8M65_P 1 2 3
M1   11 22 3 3 MOS_P
D1         1 3 DDS
R1        1 11 RTH 8.60m
D2       11 21 DDG
D3       22 21 DDG 4
R2        2 22 32
.MODEL MOS_P PMOS
+ LEVEL=3
+ L=2.0000E-6
+ W=1
+ KP=85.981E-6
+ RS=10.000E-3
+ RD=0
+ VTO=-2.0408
+ RDS=30.000E6
+ TOX=2.0000E-6
+ CGSO=1000p
+ CGDO=104p
+ CBD=0
+ RG=0
+ N=2
+ RB=1.0000E-3
+ GAMMA=0.8
+ ETA=0.002
+ KAPPA=0
+ UO=300
.MODEL DDS D
+ IS=38.894E-12
+ N=1.1117
+ RS=6.8404E-3
+ IKF=1.0976
+ CJO=21.719E-12
+ M=.49919
+ VJ=.55686
+ BV=30
+ TT=24n
.MODEL DDG D
+ CJO=760.04E-12
+ M=.79722
+ VJ=.52867
.MODEL RTH RES
+ TC1=0.008
+ TC2=0.00001
.ENDS SP8M65_P