* MP6M63_P PMOSFET model
* Date: 2008/01/29
*****************D G S
.SUBCKT MP6M63_P 1 2 3
M1 11 22 3 3 MOS_P
D1       1 3 DDS
R1      1 11 RTH 24.0m 
D2     11 21 DDG
D3     22 21 DDG
R2      2 22 60
.MODEL MOS_P PMOS
+ LEVEL=3
+ L=2.0000E-6
+ W=1
+ KP=41.322E-6
+ RS=10.000E-3
+ RD=0
+ VTO=-2.0789
+ RDS=30.000E6
+ TOX=2.0000E-6
+ CGSO=660p
+ CGDO=60p
+ CBD=0
+ RG=0
+ N=2
+ RB=1.0000E-3
+ GAMMA=0
+ KAPPA=0
+ UO=300
.MODEL DDS D
+ IS=26.144E-12
+ N=1.1797
+ RS=10.612E-3
+ IKF=.86609
+ CJO=113.62E-12
+ M=.85643
+ VJ=.62206
+ BV=30
.MODEL DDG D
+ CJO=499.59E-12
+ M=.774
+ VJ=.69155
.MODEL RTH RES
+ TC1=0.004
+ TC2=0.00001
.ENDS MP6M63_P