ROHM 4th Gen SiC MOSFETs

Our latest 4th gen SiC MOSFETs provides industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

Key Features

1.Achieves industry-leading low ON resistance with improving short-circuit ruggedness

Nevertheless, with 4th Gen SiC MOSFETs, ROHM has successfully reduced ON resistance by 40% compared to conventional products with improving short-circuit ruggedness, through device structure improvements based on its original double-trench design. The result: is a robust power switching device with the lowest ON resistance in the industry. (ROHM Feb 2022 study)

2.Minimizes switching loss by drastically reducing parasitic capacitance

ROHM’s 4th Gen MOSFETs achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd).

3.Supports 15V Gate-Source voltage, improving application design freedom

In contrast to the 18V Gate-Source voltage (Vgs) required in the 3rd Generation and earlier SiC MOSFETs, these 4th Gen products support a more flexible gate voltage range (15-18V), enabling to design a gate drive circuit that can also be used for IGBTs.

Switching loss comparison
On-resistance comparison

Application Example: Traction Inverter

6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high torque and low rotational speed range when the 4th Gen. SiC MOSFET is used in the traction inverters (calculated using the WLTC fuel economy test, an international standard).

Application Example: Traction Inverter

 

Supporting Content for ROHM 4th Gen SiC MOSFETs

Evaluation board

Evaluation board
4th Generation SiC MOSFET Half Bridge Evaluation Board
P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

The P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001 series of evaluation boards were developed for TO-247N/TO-247-4L package 4th gen SiC MOSFETs. Onboard gate driver and peripheral circuits reduce the number of man-hours required for design and evaluation.

Evaluation board
Evaluation Board HB2637L-EVK-301

The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

Evaluation board
EVK Simulatrion (ROHM Solution Simulator)
・P05CT4018KR-EVK-001 Double Pulse Test
・P04SCT4018KE-EVK-001 Double Pulse Test
・HB2637L-EVK-301 Double Pulse Test

We have released the double-pulse test simulation environment with the evk simulation model.
The simulation circuit includes EVK's pattern parasitic inductor and can simulate the operating waveforms of 4G-SiC MOSFETs with high accuracy. Simulation conditions such as operating voltage, gate drive circuit, and snubber circuit constants can also be changed. It can be used to reduce man-hours during evaluation of actual devices and for verification before board prototyping.

Documents

White Paper

Application Note

Design model

Part Number Drain-source Voltage[V] Drain-source On-state Resistance
(Typ.(mΩ)		 Package SPICE
Model		 Thermal
Model		 PLECS
Model		 PCB
Library
SCT4045DE 750 45
TO-247N		 Available Available Available
SCT4026DE 26 Available Available Available
SCT4013DE 13 Available Available Available
SCT4062KE 1200 62 Available Available Available
SCT4036KE 36 Available Available Available
SCT4018KE 18 Available Available Available -
SCT4045DR 750 45
TO-247-4L		 Available Available Available
SCT4026DR 26 Available Available Available
SCT4013DR 13 Available Available Available
SCT4062KR 1200 62 Available Available Available
SCT4036KR 36 Available Available Available
SCT4018KR 18 Available Available Available
SCT4045DW7 750 45
TO-263-7L		 Available Available Available
SCT4026DW7 26 Available Available Available
SCT4013DW7 13 Available Available Available
SCT4062KW7 1200 62 Available Available Available
SCT4036KW7 36 Available Available Available
SCT4018KW7 18 Available Available Available

Simulations (Login Required)

TO-247N (3pin)

TO-247-4L (4pin)

 

SiC MOSFET Support Content

Evaluation Board

Category SiC Product Image Part No. User Guide Purchase
Board
SiC-MOS  Evaluation
Board		 SCT4XXX series Trench(4th Generation) TO-247-N NEW
P04SCT4018KE-EVK-001		 User Guide
Product Specification		 Online
Distributors
SCT4XXX series Trench(4th Generation) TO-247-4L NEW
P05SCT4018KR-EVK-001		 Online
Distributors
SCT3XXX series Trench(3rd Generation) TO-247-4L P02SCT3040KR-EVK-001  User Guide
Product Specification		 Online
Distributors

Documents

White Paper

Application Note

Technical Articles

Schematic Design ＆ Verification

Thermal Design

Models ＆ Tools

Simulations (Login Required)

ROHM Solution Simulator is a new web-based electronic circuit simulation tool that can carry out a variety of simulations, from initial development that involves component selection and individual device verification to the system-level verification stage. This makes it possible to quickly and easily implement complete circuit verification of ROHM power devices and ICs, in simulation circuits under close to actual conditions, significantly reducing application development efforts.

TO-247N (3pin)

TO-247-4L (4pin)

Application

Topology

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