Photointerrupter Double Mold Type
RPI-0226
Outline
Ultraminiature SMD Type
Dimensions
[ Product description ]
ROHM's opetical sensors serve as eyes to monitor changes of any motions, and comply with customers' day-to-day diversifying requests.
Features
・Gap width2.0mm
・Ultraminiature SMD type
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Input(LED) | ||
| Forward current IF(mA) | 50 | |
| Reverse voltage VR(V) | 5 | |
| Power dissipation PD(mW) | 80 | |
| Collector-Emitter voltage VCEO(V) | 30 | |
| Output(Photo-toransistor) | ||
| Emitter-Collector voltage VECO(V) | 4.5 | |
| Collector current IC(mA) | 30 | |
| Power dissipation PC(mW) | 80 | |
| Temperature Characteristics | ||
| Operating temperature Topr(°C) | -30 to 85 | |
| Storage temperature Tstg(°C) | -40 to 85 | |
| Electro-optical characteristics (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Input Characteristics | ||
| Input Characteristics||Forward voltage VF(V) | 1.30 | IF=50mA |
| Input Characteristics||Reverse current IR(µA) | 10 | VR=5V |
| Output Characteristics | ||
| Output Characteristics||Dark current-Max. ICEO(µA) | 0.1 | VCE=10V |
| Output Characteristics||Peak sensitivity wavelength λP(nm) | 800 | |
| Transfer Characteristics | ||
| Transfer Characteristics||Collector current-Max. IC(mA) | 0.10 | VCE=5V,IF=20mA |
| Transfer Characteristics||Collector-Emitter saturation voltage-Max. VCE(sat)(V) | 0.4 | IF=20mA,IC=0.1mA |
| Transfer Characteristics||Response time tr·tf(µs) | 50 | VCC=5V,IF=0.1mA,RL=1000Ω |
| Infrared Light Emitting Diode | ||
| Infrared Light Emitting Diode||Cut-off frequency FC(MHz) | 1 | IF=50mA * Non-coherent Infrared light emitting diode used. |
| Infrared Light Emitting Diode||Peak light emitting wavelength λP(nm) | 850 | IF=50mA * Non-coherent Infrared light emitting diode used. |
| Phototransistor | ||
| Phototransistor||Response time tr·tf(µs) | 50 | VCC=5V,IF=1mA,RL=100Ω * This product is not designed to be protected against electromagnetic wave. |
| Phototransistor||Maximum sensitivity wavelength λP(nm) | 800 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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