| Electro-optical characteristics (Ta=25ºC) |
| Parameters |
Value |
Conditions |
| Input Characteristics |
| Input Characteristics||Forward voltage VF(V) |
1.30 |
IF=50mA |
| Input Characteristics||Reverse current IR(µA) |
10 |
VR=5V |
| Output Characteristics |
| Output Characteristics||Dark current-Max. ICEO(µA) |
0.1 |
VCE=10V |
| Output Characteristics||Peak sensitivity wavelength λP(nm) |
800 |
|
| Transfer Characteristics |
| Transfer Characteristics||Collector current-Max. IC(mA) |
0.10 |
VCE=5V,IF=20mA |
| Transfer Characteristics||Collector-Emitter saturation voltage-Max. VCE(sat)(V) |
0.4 |
IF=20mA,IC=0.1mA |
| Transfer Characteristics||Response time tr·tf(µs) |
50 |
VCC=5V,IF=0.1mA,RL=1000Ω |
| Infrared Light Emitting Diode |
| Infrared Light Emitting Diode||Cut-off frequency FC(MHz) |
1 |
IF=50mA
* Non-coherent Infrared light emitting diode used. |
| Infrared Light Emitting Diode||Peak light emitting wavelength λP(nm) |
850 |
IF=50mA
* Non-coherent Infrared light emitting diode used. |
| Phototransistor |
| Phototransistor||Response time tr·tf(µs) |
50 |
VCC=5V,IF=1mA,RL=100Ω
* This product is not designed to be protected against electromagnetic wave. |
| Phototransistor||Maximum sensitivity wavelength λP(nm) |
800 |
|
Optical Sensors
Part No. explanation