Features

・Surfacemount optical four-directional detection sensor
・Detection in four directions.
・Less malfunction by vibration, compared with mechanical-type sensor.
・Free from influence by magnetic field, unlike magnetic-type sensor.

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters	Standard value	Conditions
Input(LED)
Forward current IF(mA)	50
Reverse voltage VR(V)	5
Power dissipation PD(mW)	80
Output(Photo-toransistor)
Collector-Emitter voltage VCEO(V)	30
Emitter-Collector voltage VECO(V)	4.5
Collector current IC(mA)	30
Power dissipation PC(mW)	80
Temperature Characteristics
Operating temperature Topr(°C)	-25 to 85
Storage temperature Tstg(°C)	-30 to 85

Electro-optical characteristics (Ta=25ºC)
Rated parameters	Standard value	Conditions
Input Characteristics
Input Characteristics||Forward voltage VF(V)	1.3	IF=50mA
Input Characteristics||Reverse current IR(µA)	10	VR=10V
Output Characteristics
Output Characteristics||Dark current-Max. ICEO(µA)	0.5	VCE=10V
Output Characteristics||Peak sensitivity wavelength λP(nm)	800
Transfer Characteristics
Transfer Characteristics||Collector current-Min. IC(µA)	100
Transfer Characteristics||Collector-Emitter saturation voltage-Max. VCE(sat)(V)	0.4	IF=20mA,IC=0.1mA
Transfer Characteristics||Response time tr·tf(µs)	10	VCC=5V,IF=20mA,RL=100Ω
Infrared Light Emitting Diode
Infrared Light Emitting Diode||Cut-off frequency FC(MHz)	1	IF=50mA * Non-coherent Infrared light emitting diode used.
Infrared Light Emitting Diode||Peak light emitting wavelength λP(nm)	950	IF=50mA * Non-coherent Infrared light emitting diode used.
Phototransistor
Phototransistor||Response time tr·tf(µs)	10	VCC=5V,IF=1mA,RL=100Ω * This product is not designed to be protected against electromagnetic wave.
Phototransistor||Maximum sensitivity wavelength λP(nm)	800