[ Product description ]
High break-down resistance is achieved by the die of optimized active layer design.A thin package improves applicability in compact devices.
Features
• Thin,high heat dissipation package
• High COD
• Low noise design
Product specifications
| Absolute maximum ratings (Tc=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Optical output Po(mW) |
10/240(Pulse) |
|
| Reverse voltage VR(V) |
2 |
|
| Operating temperature Topr(ºC) |
-10 to +75 |
|
| Storage temperature Tstg(ºC) |
-40 to +85 |
|
| Electro-optical characteristics |
| Parameters |
Value |
Conditions |
| Peak emission wavelength λp(nm) |
658/782 |
Po=5mW/90mW |
| Threshold current Ith(mA) |
25/35 |
|
| Operating current Iop(mA) |
30/130 |
Po=5mW/90mW |
| Operating voltage Vop(V) |
2.3/1.9 |
Po=5mW/90mW |
| Monitor current Im |
- |
|
| Parallel divergence angle θ//(deg) |
10.5/8.0 |
Po=5mW/90mW |
| Perpendicular divergence angle θ⊥(deg) |
24/16 |
Po=5mW/90mW |
Laser Diodes
Features of laser diodes