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660/780nm Dual Wave High Power Lasers

RLD2WMGU1 * Under development

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Data Sheet
Technical Data
RoHS

Outline

RLD2WMGU1 Outline

Dimensions

RLD2WMGU1 Dimensions

* Click to enlarge.

Equivalent circuit diagram

RLD2WMGU1 Equivalent circuit diagram

[ Product description ]

Stable optical output power and high break-down resistance by original die structure. A thin package improves applicability in compact devices.

Features

• Thin, high heat dissipation package
• Stable optical output characteristics

Product specifications

Absolute maximum ratings (Tc=25ºC)
Rated parameters Standard value Conditions
Optical output Po(mW) 300(Pulse)/350(Pulse)  
Reverse voltage VR(V) 2  
Operating temperature Topr(°C) -10 to +85  
Storage temperature Tstg(°C) -40 to +85  
Electro-optical characteristics
Parameters Value Conditions
Peak emission wavelength λp(nm) 662/785 Po=90mW/160mW
Threshold current Ith(mA) 60/55  
Operating current Iop(mA) 160/250 Po=90mW/160mW
Operating voltage Vop(V) 2.8/2.5 Po=90mW/160mW
Monitor current Im -  
Parallel divergence angle θ//(deg) 9.5/8.5 Po=90mW/160mW
Perpendicular divergence angle θ⊥(deg) 17.5/16 Po=90mW/160mW

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Status
*
RoHS Packing
style
Package
quantity
Sales Distribution
Inventory
RLD2WMGU1-NEW Yes Inquiry

* Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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