- Illumination and Lightning Products
- Power Products
- Audio-rerated Products
- Mobile Phones/Portable Equipment Products
- Products for LCDs
- Power Management Products
- PC/Peripheral Device Products
High efficiency MOSFETs for DC/DC power supplies
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0.9V drive MOSFETs |
250V MOSFETs: RC Series |
PrestoMOSTM
Compact Complex VMT6 Package | Power MOSFETs | MPT6 | High-speed Switching High Voltage Resistance MOSFETs |
Muting Transistors | KMD2 Package | Next Generation Schottky Barrier Diodes |
|
0.9V drive MOSFETs |
250V MOSFETs: RC Series |
PrestoMOSTMCompact Complex VMT6 Package | Power MOSFETs | MPT6 | High-speed Switching High Voltage Resistance MOSFETs |
Muting Transistors | KMD2 Package | Next Generation Schottky Barrier Diodes |
An original low capacitance structure is utilized for reduced switching loss at the High Side block of the synchronous rectification DC/DC circuit, while low ON resistance characteristics minimizes conduction loss at the Low Side, significantly increasing overall efficiency.
A wide array of packages are available, from the 1006-sized VMN3 to the larger SST3 (2913 size), contributing to greater compactness, less weight, fewer parts, and lower power consumption.
New process technology and chip design optimization ensure simultaneous high performance, high di/dt destruction resistance with low ON resistance. Ideal for motor drive circuits and projector light source power supplies requiring efficient, energy-saving operation with high di/dt failure tolerance.
A broad lineup of high voltage MOSFETs (dubbed 'PrestoMOSTM) featuring high-speed trr optimized for power supplies with integrated inverter. High switching speed and an internal diode with high-speed trr characteristics result in high efficiency, low-loss operation. Contributes to greater set compactness.
The new VMT3 package features just 2 pins, taking up approximately 43% less space than the EMT6 package. In addition, complex (compound) types are offered, and the VT6T11, VT6T12, VT6X11, and VT6X12 can be used in pairs, making them ideal for current mirror applications (hFE1/hFE=2.09-1.1).
ROHM offers MOSFETs specifically designed for LED backlights, which are quickly becoming the preferred choice over CCFL(EEFL) due to their smaller environmental footprint. All required functions are integrated, including a step-up converter and load switch circuit that provides a VDSS optimized for LED backlights (45V/60V). In addition, the industry's lowest ON-resistance results in significantly lower power consumption.
ROHM MPT6 series features the same rated power as the conventional SOP8 package, but in a compact form factor 40% smaller and 43% thinner (4540 size), making them ideal for compact devices. In addition, a new low ON-resistance element has been developed that provides an ON-resistance equivalent top dual SOP8 products.
ON-resistance is reduced 50% over conventional products by utilizing novel low resistance processes, greatly ncreasingswitching speeds while decreasing switching loss
A copper frame mitigates the effects of magnetic fields (US6H23), resulting in superior audio quality, while low ON-resistance improves attenuation characteristics. In addition, a dual-type model is available that decreases the number of external components required along with mounting area.
ROHM's now offers the KMD2 package, created utilizing proprietary chip device technology and ultra-fine process technology cultivated from the development of the GMD2 package (used for small-signal diodes). At only 1.6mm x 0.8mm, it represents the industry's smallest class of high power diodes. Currently only Schottky barrier diodes are available (2 types). However, Zener diodes are now under development.
Original precision technology and unique device construction enables simultaneous low VF and IR along with high ESD resistance.
