Outline

TSMT3/SC-96 @ROHM/JEDEC
Dimensions

* Click to enlarge.
Equivalent circuit diagram

[ Product description ]
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Features
• Low-voltage1.5V-drive type Pch MOSFET
Product specifications
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
-12 |
|
| Gate-Source voltage VGSS(V) |
±10 |
|
| Drain current(continuous) ID(A) |
±4 |
|
| Source current(body Di) IS(A) |
-0.8 |
|
| Total power dissipation PD(W) |
1 |
Mounted on a ceramic board |
| Channel temperature Tch(°C) |
150 |
|
| Storage temperature Tstg(°C) |
-55 to +150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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