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1.5V Drive Pch MOSFET

RT1A050ZP

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Outline

RT1A050ZP Outline

TSST8

Dimensions

RT1A050ZP Dimensions

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Equivalent circuit diagram

RT1A050ZP Equivalent circuit diagram

[ Product description ]

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Features

• Low-voltage1.5V-drive type Pch MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -12  
Gate-Source voltage VGSS(V) ±10  
Drain current(continuous) ID(A) ±5  
Source current(body Di) IS(A) -1  
Total power dissipation PD(W) 1.25 Total
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
RT1A050ZPTR Yes Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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