Excellence in Electronics - ROHM

4V Drive Pch MOSFET

RSD130P10

Outline

RSD130P10 Outline

CPT3/SC-63/SOT-428
@ROHM/JEDEC/JEITA

Dimensions

RSD130P10 Dimensions

* Click to enlarge.

Equivalent circuit diagram

RSD130P10 Equivalent circuit diagram

[ Product description ]

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

Features

E4V-drive type Pch Power MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -100  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±13  
Source current(body Di) IS(A) -13  
Total power dissipation PD(W) 20  
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



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