[ Product description ]
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
30 |
|
| Gate-Source voltage VGSS(V) |
±20 |
|
| Drain current(continuous) ID(A) |
±9 |
|
| Source current(body Di) IS(A) |
1.6 |
|
| Total power dissipation PD(W) |
2 |
Mounted on a ceramic board |
| Channel temperature Tch(ºC) |
150 |
|
| Storage temperature Tstg(ºC) |
-55 to +150 |
|
Operation notes