[ Product description ]
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Features
E2.5V-drive type Nch Small-signal MOSFET
Product specifications
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
60 |
|
| Gate-Source voltage VGSS(V) |
±20 |
|
| Drain current(continuous) ID(A) |
±0.25 |
|
| Source current(body Di) IS(A) |
0.15 |
|
| Total power dissipation PD(W) |
0.2 |
Each terminal mounted on a recommended land pattern |
| Channel temperature Tch(°C) |
150 |
|
| Storage temperature Tstg(°C) |
-55 to +150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Status Product
| Part No. |
Package |
Status * |
RoHS |
Packing style |
Package quantity |
Sales |
Distribution Inventory |
| RK7002BT116 |
SST3/SOT-23 @ROHM/JEITA |
Active |
Yes |
taping |
3000 |
Inquiry |
|
*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.
*2 Active: Production or current type Preparation: Preliminary type Preview: Development type