10V Drive Nch MOSFET
R6008FNX
Outline
TO-220FM
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Features
E10V-drive type Nch Power MOSFET
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Drain-Source voltage VDSS(V) | 600 | |
| Gate-Source voltage VGSS(V) | ±30 | |
| Drain current(continuous) ID(A) | ±8 | Please use the device with SOA(safety operation area) |
| Source current(body Di) IS(A) | 8 | Please use the device with SOA(safety operation area) |
| Total power dissipation PD(W) | 50 | |
| Channel temperature Tch(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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