R6008ANX | MOSFETs | Transistors | Discrete Semiconductors

Outline

R6008ANX Outline

TO-220FM

Dimensions

* Click to enlarge.

Equivalent circuit diagram

R6008ANX Equivalent circuit diagram

[ Product description ]

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

Features

E4V-drive type Nch Small-signal MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters	Standard value	Conditions
Drain-Source voltage V_DSS(V)	600
Gate-Source voltage V_GSS(V)	±30
Drain current(continuous) I_D(A)	±8	Please use the device with SOA(safety operation area)
Source current(body Di) I_S(A)	8	Please use the device with SOA(safety operation area)
Total power dissipation P_D(W)	50
Channel temperature Tch(ºC)	150
Storage temperature Tstg(ºC)	-55 to +150

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.

Status Product

Part No.	Package	Status *1	RoHS	Packing style	Package quantity	Samples *2	Sales
R6008ANX	TO-220FM	Active	Yes	bulk	500		Inquiry

*1 Active: Production or current type Preparation: Preliminary type Preview: Development type

*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

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