1.8V Drive Nch+Nch MOSFET
US6K4
Outline
TUMT6
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Features
• 1.8V-drive type Nch+Nch Middle-power MOSFET
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Drain-Source voltage VDSS(V) | 20 | |
| Gate-Source voltage VGSS(V) | 10 | |
| Drain current(continuous) ID(A) | ±1.5 | |
| Source current(body Di) IS(A) | 0.6 | |
| Total power dissipation PD(W) | 1 | Mounted on a ceramic board |
| Channel temperature Tch(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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