[ Product description ]
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Features
• 1.8V-drive type Nch+Nch Middle-power MOSFET
Product specifications
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
20 |
|
| Gate-Source voltage VGSS(V) |
10 |
|
| Drain current(continuous) ID(A) |
±1.5 |
|
| Source current(body Di) IS(A) |
0.6 |
|
| Total power dissipation PD(W) |
1 |
Mounted on a ceramic board |
| Channel temperature Tch(ºC) |
150 |
|
| Storage temperature Tstg(ºC) |
-55 to +150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Status Product
| Part No. |
Package |
Status
*1 |
RoHS |
Packing
style |
Package
quantity |
Samples
*2 |
Sales |
| US6K4TR |
TUMT6 |
Active |
Yes |
Taping |
3000 |
|
Inquiry |
*1 Active: Production or current type Preparation: Preliminary type Preview: Development type
*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.
Transistors
Operation notes