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Energy Saving!ECO Devices

4V-drive type Nch+Pch Power MOSFET

SP8M65

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  Data Sheet Design Model  SPICE (PDF)  SPICE (lib)
Package RoHS Operation notes Condition of soldering

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Outline

SP8M65 Outline

SOP8

Dimensions

SP8M65 Dimensions

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Equivalent circuit diagram

SP8M65 Equivalent circuit diagram

 

[ Product description ]

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Features

• 4V-drive type Nch+Pch Power MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±6  
Source current(body Di) IS(A) 1.6  
Total power dissipation PD(W) 2 Mounted on a ceramic board
Channel temperature Tch(ºC) 150  
Storage temperature Tstg(ºC) -55 to +150  
Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±7  
Source current(body Di) IS(A) -1.6  
Total power dissipation PD(W) 2 Mounted on a ceramic board
Channel temperature Tch(ºC) 150  
Storage temperature Tstg(ºC) -55 to +150  

Status Product

Part No. Package Status
*		 RoHS Constitution
materials list		 Packing
style		 Package
quantity		 Samples Sales
SP8M65TB SOP8 Active Yes Taping 2500 Inquiry

* Active: Production or current type  Preparation: Preliminary type  Preview: Development type

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