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4V Drive Nch+Pch MOSFET

QS8M11A NEW

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Outline

QS8M11A Outline

TSMT8

Dimensions

QS8M11A Dimensions

* Click to enlarge.

Equivalent circuit diagram

QS8M11A Equivalent circuit diagram

[ Product description ]

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Features

• 4V-drive type Nch+Pch Middle-power MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC) (Tr1)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±3.5  
Source current(body Di) IS(A) 1  
Total power dissipation PD(W) 1.5 Mounted on a ceramic board
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  
Absolute maximum ratings (Ta=25ºC) (Tr2)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±3.0  
Source current(body Di) IS(A) -1.0  
Total power dissipation PD(W) 1.5 Mounted on a ceramic board
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
QS8M11ATL TSMT8 Active Yes Taping 3000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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