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1.2V Drive Nch+Nch MOSFET

EM6K7

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Outline

EM6K7 Outline

EMT6

Dimensions

EM6K7 Dimensions

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Equivalent circuit diagram

EM6K7 Equivalent circuit diagram

[ Product description ]

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Features

• 1.2V-drive type Nch+Nch Small-signal MOSFET

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 20  
Gate-Source voltage VGSS(V) ±8  
Drain current(continuous) ID(A) 0.2  
Source current(body Di) IS -  
Total power dissipation PD(W) 0.15 Each terminal mounted on a recommended land pattern
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
EM6K7T2R Yes Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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