1.5V Drive Pch+SBD MOSFET
TT8U1
Outline
TSST8
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Features
• This is a high-power, surface-mount MOSFET of 3.0x1.6mm, mounting space-saving type.
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Drain-Source voltage VDSS(V) | -20 | |
| Gate-Source voltage VGSS(V) | ±10 | |
| Drain current(continuous) ID(A) | ±2.4 | |
| Source current(body Di) IS(A) | -0.8 | |
| Total power dissipation PD(W) | 1.25 | Mounted on a ceramic board |
| Channel temperature Tch(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Repetitive peak reverse voltage VRM(V) | 30 | |
| Reverse voltage VR(V) | 20 | |
| Forward current IF(A) | 1 | |
| Forward current surge peak IFSM(A) | 3 | 60Hz/1cyc |
| Total power dissipation PD(W) | 1.25 | Mounted on a ceramic board |
| Junction temperature Tj(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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