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1.5V Drive Pch+SBD MOSFET

TT8U1

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Outline

TT8U1 Outline

TSST8

Dimensions

TT8U1 Dimensions

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Equivalent circuit diagram

TT8U1 Equivalent circuit diagram

[ Product description ]

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Features

• This is a high-power, surface-mount MOSFET of 3.0x1.6mm, mounting space-saving type.

Product specifications

Absolute maximum ratings (Ta=25ºC) (Tr)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -20  
Gate-Source voltage VGSS(V) ±10  
Drain current(continuous) ID(A) ±2.4  
Source current(body Di) IS(A) -0.8  
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  
Absolute maximum ratings (Ta=25ºC) (Di)
Rated parameters Standard value Conditions
Repetitive peak reverse voltage VRM(V) 30  
Reverse voltage VR(V) 20  
Forward current IF(A) 1  
Forward current surge peak IFSM(A) 3 60Hz/1cyc
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Junction temperature Tj(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
TT8U1TR Yes Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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