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4V Drive Pch+SBD MOSFET

QS6U24

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Outline

QS6U24 Outline

TSMT6

Dimensions

QS6U24 Dimensions

* Click to enlarge.

Equivalent circuit diagram

QS6U24 Equivalent circuit diagram

[ Product description ]

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Features

• This is a high-power, surface-mount MOSFET of 2.9x2.8mm, mounting space-saving type.

Product specifications

Absolute maximum ratings (Ta=25ºC) (Tr)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) -30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) ±1  
Source current(body Di) IS(A) -0.3  
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  
Absolute maximum ratings (Ta=25ºC) (Di)
Rated parameters Standard value Conditions
Repetitive peak reverse voltage VRM(V) 25  
Reverse voltage VR(V) 20  
Forward current IF(A) 0.7  
Forward current surge peak IFSM(A) 3 60Hz/1cycle
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Junction temperature Tj(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
QS6U24TR TSMT6/SC-95
@ROHM/JEDEC		 Active Yes Taping 3000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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