1.8V Drive Nch+SBD MOSFET
QS5U34
Outline
TSMT5
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Features
• This is a high-power, surface-mount MOSFET of 2.9x2.8mm, mounting space-saving type.
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Drain-Source voltage VDSS(V) | 20 | |
| Gate-Source voltage VGSS(V) | 10 | |
| Drain current(continuous) ID(A) | ±1.5 | |
| Source current(body Di) IS(A) | 0.6 | |
| Total power dissipation PD(W) | 1.25 | Mounted on a ceramic board |
| Channel temperature Tch(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Repetitive peak reverse voltage VRM(V) | 30 | |
| Reverse voltage VR(V) | 20 | |
| Forward current IF(A) | 0.5 | |
| Forward current surge peak IFSM(A) | 2 | 60Hz/1cycle |
| Total power dissipation PD(W) | 1.25 | Mounted on a ceramic board |
| Junction temperature Tj(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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