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1.8V Drive Nch+SBD MOSFET

QS5U34

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Outline

QS5U34 Outline

TSMT5

Dimensions

QS5U34 Dimensions

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Equivalent circuit diagram

QS5U34 Equivalent circuit diagram

[ Product description ]

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Features

• This is a high-power, surface-mount MOSFET of 2.9x2.8mm, mounting space-saving type.

Product specifications

Absolute maximum ratings (Ta=25ºC) (Tr)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 20  
Gate-Source voltage VGSS(V) 10  
Drain current(continuous) ID(A) ±1.5  
Source current(body Di) IS(A) 0.6  
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  
Absolute maximum ratings (Ta=25ºC) (Di)
Rated parameters Standard value Conditions
Repetitive peak reverse voltage VRM(V) 30  
Reverse voltage VR(V) 20  
Forward current IF(A) 0.5  
Forward current surge peak IFSM(A) 2 60Hz/1cycle
Total power dissipation PD(W) 1.25 Mounted on a ceramic board
Junction temperature Tj(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
QS5U34TR Yes Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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