[ Product description ]
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Features
• This is a high-power, surface-mount MOSFET of 1.6x1.6mm, mounting space-saving type.
Product specifications
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
-20 |
|
| Gate-Source voltage VGSS(V) |
±12 |
|
| Drain current(continuous) ID(A) |
±1 |
|
| Source current(body Di) IS(A) |
-0.4 |
|
| Total power dissipation PD(W) |
0.8 |
Mounted on a ceramic board |
| Channel temperature Tch(ºC) |
150 |
|
| Storage temperature Tstg(ºC) |
-55 to +150 |
|
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Repetitive peak reverse voltage VRM(V) |
25 |
|
| Reverse voltage VR(V) |
20 |
|
| Forward current IF(A) |
0.5 |
|
| Forward current surge peak IFSM(A) |
2 |
60Hz/1cyc |
| Total power dissipation PD(W) |
0.8 |
Mounted on a ceramic board |
| Junction temperature Tj(ºC) |
150 |
|
| Storage temperature Tstg(ºC) |
-55 to +150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Status Product
| Part No. |
Package |
Status
*1 |
RoHS |
Packing
style |
Package
quantity |
Samples
*2 |
Sales |
| ES6U42T2R |
WEMT6 |
Active |
Yes |
Taping |
8000 |
|
Inquiry |
*1 Active: Production or current type Preparation: Preliminary type Preview: Development type
*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.
Transistors
Operation notes