[ Product description ]
Devices integrating two transistors are available in ultra-compact packages,suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
• Ultra-compact complex bipolar transistor for power management
Product specifications
| Absolute maximum ratings (Ta=25ºC) (DTR) |
| Rated parameters |
Standard value |
Conditions |
| Collector-Base voltage VCBO(V) |
-50 |
|
| Collector-Emitter voltage VCEO(V) |
-50 |
|
| Emitter-Base voltage VEBO(V) |
-5 |
|
| Collector current(continuous) IC(A) |
-0.1 |
|
| Collector current(pulse) ICP |
- |
|
| Total power dissipation PC |
- |
|
| Junction temperature Tj(deg) |
150 |
|
| Storage temterature Tstg(deg) |
-55 to +150 |
|
| Absolute maximum ratings (Ta=25ºC) (Tr) |
| Rated parameters |
Standard value |
Conditions |
| Drain-Source voltage VDSS(V) |
30 |
|
| Gate-Source voltage VGSS(V) |
±20 |
|
| Drain current(continuous) ID(A) |
0.1 |
|
| Total power dissipation PD(W) |
0.15 |
|
| Junction temperature Tj(°C) |
150 |
|
| Storage temterature Tstg(°C) |
-55 to +150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Status Product
| Part No. |
Package |
Status * |
RoHS |
Packing style |
Package quantity |
Sales |
Distribution Inventory |
| EMF32T2R |
EMT6/SC-107C @ROHM/JEDEC |
Active |
Yes |
Taping |
8000 |
Inquiry |
|
*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.
*2 Active: Production or current type Preparation: Preliminary type Preview: Development type