Complex Transistor(DTR+DTR)
US6H23
Outline
TUMT6
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
• Ultra-compact complex bipolar transistor, input resistor type
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Collector-Base voltage VCBO(V) | 20 | |
| Collector-Emitter voltage VCEO(V) | 20 | |
| Emitter-Base voltage VEBO(V) | 12 | |
| Collector current IC(A) | 0.6 | |
| Collector current(pulse) ICP(A) | 1 | Pw=10ms 1Pulse |
| Total power dissipation PD(W) | 0.4 | Each terminal mounted on a recommended land pattern |
| Junction temperature Tj(°C) | 150 | |
| Storage temperature Tstg(°C) | -55 to 150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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