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 Semiconductors

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Complex Transistor(DTR+DTR)

UMH8N

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Outline

UMH8N Outline

UMT6

Dimensions

UMH8N Dimensions

* Click to enlarge.

Equivalent circuit diagram

UMH8N Equivalent circuit diagram

[ Product description ]

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Features

• Ultra-compact complex bipolar transistor, input resistor type

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Collector-Base voltage VCBO(V) 50  
Collector-Emitter voltage VCEO(V) 50  
Emitter-Base voltage VEBO(V) 5  
Collector current IC(A) 0.1  
Collector current(pulse) ICP -  
Total power dissipation PD(W) 0.15 Each terminal mounted on a recommended land pattern
Junction temperature Tj(°C) 150  
Storage temperature Tstg(°C) -55 to 150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*
RoHS Packing
style
Package
quantity
Sales Distribution
Inventory
UMH8NTR UMT6/SC-88/SOT-363
@ROHM/JEDEC/JEITA
Active Yes Taping 3000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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