[ Product description ]
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
• Ultra-compact complex bipolar transistor, input resistor type
Product specifications
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Collector-Base voltage VCBO(V) |
20 |
|
| Collector-Emitter voltage VCEO(V) |
20 |
|
| Emitter-Base voltage VEBO(V) |
12 |
|
| Collector current IC(A) |
0.6 |
|
| Collector current(pulse) ICP(A) |
1 |
Pw=10ms 1Pulse |
| Total power dissipation PD(W) |
0.3 |
Each terminal mounted on a recommended land pattern |
| Junction temperature Tj(°C) |
150 |
|
| Storage temperature Tstg(°C) |
-55 to 150 |
|
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Status Product
| Part No. |
Status * |
RoHS |
Packing style |
Package quantity |
Sales |
Distribution Inventory |
| IMH21T110 |
|
Yes |
|
|
Inquiry |
|
*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.
*2 Active: Production or current type Preparation: Preliminary type Preview: Development type