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Complex Transistor(DTR+DTR)

EMH1

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Outline

EMH1 Outline

EMT6

Dimensions

EMH1 Dimensions

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Equivalent circuit diagram

EMH1 Equivalent circuit diagram

[ Product description ]

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Features

• Ultra-compact complex bipolar transistor, potential divider type

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Supply voltage VCC(V) 50  
Input voltage VIN(V) -10 to 40  
Collector current IC(A) 0.1 Characteristics of built-in transistor
Output current IO(A) 0.03  
Total power dissipation PD(W) 0.15 Each terminal mounted on a recommended land pattern
Junction temperature Tj(deg) 150  
Storage temperature Tstg(deg) -55 to 150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
EMH1T2R EMT6/SC-107C
@ROHM/JEDEC		 Active Yes Taping 8000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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