Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
EUltra-compact complex bipolar transistor for DC-DC converter
Product specifications
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Standard value
Conditions
Supply voltage VCC(V)
50
Input voltage VIN(V)
-5 to+12
Collector current IC(A)
-0.1
max.
Total power dissipation PD(W)
0.15
Each terminal mounted on a recommended land pattern
Junction temperature Tj(deg)
150
Storage temterature Tstg(deg)
-55 to+125
Absolute maximum ratings (Ta=25ºC)
Rated parameters
Standard value
Conditions
Repetitive peak reverse voltage VRM
-
Reverse voltage VR(V)
30
Forward current IF
-
Forward current surge peak IFSM(A)
1
60Hz/1cycle
Total power dissipation PD(W)
0.15
Each terminal mounted on a recommended land pattern
Transistors
Operation notes