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Complex Transistor(BIP+MOS)

EMF9

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Outline

EMF9 Outline

EMT6

Dimensions

EMF9 Dimensions

* Click to enlarge.

Equivalent circuit diagram

EMF9 Equivalent circuit diagram

[ Product description ]

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Features

• Ultra-compace complex bipolar transistor for power management

Product specifications

Absolute maximum ratings (Ta=25ºC) (Tr1)
Rated parameters Standard value Conditions
Collector-Base voltage VCBO(V) 15  
Collector-Emitter voltage VCEO(V) 12  
Emitter-Base voltage VEBO(V) 6  
Collector current(continuous) IC(A) 0.5  
Collector current(pulse) ICP(A) 1 Single pulse Pw=1ms
Total power dissipation PC(W) 0.15 120mW per element must not be exceeded. Each terminal mounted on a recommended land pattern
Junction temperature Tj(°C) 150  
Storage temterature Tstg(°C) -55 to +150  
Absolute maximum ratings (Ta=25ºC) (Tr2)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 30  
Gate-Source voltage VGSS(V) ±20  
Drain current(continuous) ID(A) 0.1  
Total power dissipation PD(W) 0.15 120mW per element must not be exceeded. Each terminal mounted on a recommended land pattern
Channel temperature Tch(°C) 150  
Storage temperature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
EMF9T2R EMT6/SC-107C
@ROHM/JEDEC		 Active Yes Taping 8000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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