Complex Transistor(BIP+BIP)
VT6T1
Outline
VMT6
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
• Ultra-compact complex bipolar transistor for pre-amplifier
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Collector-Base voltage VCBO(V) | -20 | |
| Collector-Emitter voltage VCEO(V) | -20 | |
| Emitter-Base voltage VEBO(V) | -5 | |
| Collector current(continuous) IC(A) | -0.2 | |
| Collector current(pulse) ICP(A) | -0.4 | Single pulse Pw=1ms |
| Element power dissipation PC | - | |
| Total power dissipation PC | - | |
| Element power dissipation PD(W) | 0.12(PD) | Each terminal mounted on a recommended land pattern |
| Power dissipation PD(W) | 0.15(PD) | Each terminal mounted on a recommended land pattern |
| Junction temperature Tj(°C) | 150 | |
| Storage temterature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
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