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Complex Transistor(BIP+BIP)

UMT2N

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Outline

UMT2N Outline

UMT6

Dimensions

UMT2N Dimensions

* Click to enlarge.

Equivalent circuit diagram

UMT2N Equivalent circuit diagram

[ Product description ]

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Features

• Ultra-compact complex bipolar transistor for pre-amplifier

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Collector-Base voltage VCBO(V) -60  
Collector-Emitter voltage VCEO(V) -50  
Emitter-Base voltage VEBO(V) -6  
Collector current(continuous) IC(A) -0.15  
Collector current(pulse) ICP -  
Element power dissipation PC(W) 0.12  
Total power dissipation PC(W) 0.15 Each terminal mounted on a recommended land pattern
Junction temperature Tj(°C) 150  
Storage temterature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
UMT2NTR UMT6/SC-88/SOT-363
@ROHM/JEDEC/JEITA		 Active Yes Taping 3000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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