Complex Transistor(BIP+BIP)
EMX18
Outline
EMT6/SC-107C
@ROHM/JEDEC
Dimensions
* Click to enlarge.
Equivalent circuit diagram
[ Product description ]
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Features
• Ultra-compact complex bipolar transistor for pre-amplifier
Product specifications
| Absolute maximum ratings (Ta=25ºC) | ||
| Rated parameters | Standard value | Conditions |
| Collector-Base voltage VCBO(V) | 15 | |
| Collector-Emitter voltage VCEO(V) | 12 | |
| Emitter-Base voltage VEBO(V) | 6 | |
| Collector current(continuous) IC(A) | 0.5 | |
| Collector current(pulse) ICP(A) | 1 | Single pulse Pw=1ms |
| Element power dissipation PC(W) | 0.12 | |
| Total power dissipation PC(W) | 0.15 | Each terminal mounted on a recommended land pattern |
| Element power dissipation PD | - | |
| Power dissipation PD | - | |
| Junction temperature Tj(°C) | 150 | |
| Storage temterature Tstg(°C) | -55 to +150 | |
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Copyright © 1997-2012 ROHM CO.,LTD.