[ Product description ]
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| Absolute maximum ratings (Ta=25ºC) |
| Rated parameters |
Standard value |
Conditions |
| Collector-Base voltage VCBO(V) |
15 |
|
| Collector-Emitter voltage VCEO(V) |
12 |
|
| Emitter-Base voltage VEBO(V) |
6 |
|
| Collector current(continuous) IC(A) |
0.5 |
|
| Collector current(pulse) ICP(A) |
1 |
Single pulse Pw=1ms |
| Element power dissipation PC(W) |
0.12 |
|
| Total power dissipation PC(W) |
0.15 |
Each terminal mounted on a recommended land pattern |
| Junction temperature Tj(ºC) |
150 |
|
| Storage temterature Tstg(ºC) |
-55 to +150 |
|
Transistors
Operation notes