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Complex Transistors

Rohm's production volume of Transistor is world's top class and transistor products had been getting refined by quickly complying with the market needs. This group of transistors are hybrid transistor with other device as combination listed below in ultra-small package type, small power type and so on, for the benefit of space saving and components reduction.
 
MOSFET
  
Bipolar Transistors
  
Digital Transistors
  
with Diode
[MOS+MOS]
[MOS+Diode] 		  [BIP+BIP]
[BIP+DTR]
[DTR+MOS]
 [BIP+MOS]
[BIP+Diode]
[DTR+Diode]
   [DTR+DTR]   MOS[MOS+Diode]
BIP[BIP+Diode]
BIP[DTR+Diode]




Product List
Complex MOSFETs[ MOSFET + MOSFET ]

Small Signal MOSFET
EMT6 UMT5
(SC-88A)
<SOT-353>		 UMT6
(SC-88)
<SOT-363>		 SMT6
(SC-74)
<SOT-457>
[unit:mm]
Drive
Voltage
(V)		 ID
(A)		 VDSS(V) RoHS
20Package30Package50Package60Package
0.9 0.2 ----EM6K34(N+N)
UM6K34N(N+N)		EMT6
UMT6		-- Yes
1.2 0.2 EM6J1(P+P)
EM6K7(N+N)
EM6M2(N+P)		EMT6
EMT6
EMT6		--EM6K33(N+N)
UM6K33N(N+N)		EMT6
UMT6		-- Yes
1.8 0.3 EM6K6(N+N)EMT6------ Yes
2.5 0.1 --EM6K1(N+N)
EM6M1(N+P)
UM5K1N(N+N)
UM6K1N(N+N)		EMT6
EMT6
UMT5
UMT6		---- Yes
0.25 ------EM6K31(N+N)
UM6K31N(N+N)		EMT6
UMT6		 Yes
4 0.2 --UM6J1N(P+P)UMT6--SM6K2(N+N)SMT6 Yes
(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Middle Power MOSFET
TUMT6 TSMT5 TSMT6 TSMT8 TSST8 MPT6
[unit:mm]
Drive
Voltage
(V)		 ID
(A)		 VDSS(V) RoHS
12Package20Package30Package45Package60Package
1.5 1.3 US6J11(P+P)TUMT6-------- Yes
1.5 --US6M11(N+P)TUMT6------ Yes
2 QS6J11(P+P)TSMT6-------- Yes
2.5 TT8J1(P+P)TSST8TT8J21(P+P)
TT8K1(N+N)
TT8M1(N+P)
TT8M3(N+P)		TSST8
TSST8
TSST8
TSST8		------ Yes
4 QS8J2(P+P)TSMT8-------- Yes
4.5 QS8J1(P+P)TSMT8-------- Yes
1.8 1.5 --US6K4(N+N)TUMT6------ Yes
2.5 1 ----QS6K1(N+N)TSMT6QS6K21(N+N)TSMT6-- Yes
1.5 ----QS6M3(N+P)
QS6M4(N+P)
US6K1(N+N)
US6M2(N+P)		TSMT6
TSMT6
TUMT6
TUMT6		---- Yes
2 ----QS5K2(N+N)TSMT5---- Yes
2.5 ----TT8K2(N+N)TSST8---- Yes
3.5 ----QS8K2(N+N)TSMT8---- Yes
2.5/1.5 2.5 ----TT8M2(N+P)TSST8---- Yes
4 1.4 ----US6K2(N+N)
US6M1(N+P)		TUMT6
TUMT6		---- Yes
2 --------MP6K31(N+N)MPT6 Yes
2.5 ----TT8J2(P+P)TSST8---- Yes
3.5 ----QS8M11(N+P)TSMT8---- Yes
4 ----QS8J4(P+P)TSMT8QS8K21(N+N)TSMT8-- Yes
5 ----MP6K12(N+N)
QS8J5(P+P)		MPT6
TSMT8		---- Yes
(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Middle Power MOSFET
SOP8
[unit:mm]
Drive
Voltage
(V)		 ID
(A)		 VDSS(V) RoHS
30Package45Package60Package80Package100Package250Package
4 3 --------SP8M51(N+P)SOP8-- Yes
3.4 ------SH8M41(N+P)SOP8---- Yes
3.5 SH8K5(N+N)
SH8M2(N+P)		SOP8
SOP8		---------- Yes
4.5 SH8J62(P+P)SOP8SH8K22(N+N)
SH8M24(N+P)		SOP8
SOP8		SH8K32(N+N)SOP8------ Yes
5 SH8K1(N+N)
SH8M3(N+P)		SOP8
SOP8		---------- Yes
6 SH8K2(N+N)
SH8M5(N+P)		SOP8
SOP8		---------- Yes
7 SH8J65(P+P)
SH8K3(N+N)		SOP8
SOP8		---------- Yes
9 SH8J66(P+P)
SH8K4(N+N)
SH8M4(N+P)		SOP8
SOP8
SOP8		---------- Yes
10 3 ----------SH8M70(N+P)SOP8 Yes
(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Complex MOSFETs[ MOSFET + Diode ] / [ Diode + MOSFET ]
TUMT5TSMT5WEMT6TSST8
[unit:mm]
Drive
Voltage
(V)		 ID
(A)		 VDSS(V) RoHS
12Package20Package30Package45Package
1.5 1.5 --ES6U2(N+SBD)WEMT6---- Yes
2.4 --TT8U1(P+SBD)
TT8U2(P+SBD)		TSST8
TSST8		---- Yes
2.5 --QS5U36(N+SBD)TSMT5---- Yes
1.8 1.3 ES6U1(P+SBD)WEMT6------ Yes
1.5 --QS5U34(N+SBD)TSMT5---- Yes
2.5 1 --ES6U42(P+SBD)
US5U30(P+SBD)
US5U38(P+SBD)		WEMT6
TUMT5
TUMT5		---- Yes
1.5 --QS5U21(P+SBD)
QS5U23(P+SBD)
QS5U26(P+SBD)
QS5U27(P+SBD)
QS6U22(P+SBD)		TSMT5
TSMT5
TSMT5
TSMT5
TSMT6		ES6U41(N+SBD)
US5U1(N+SBD)
US5U3(N+SBD)
US6U37(N+SBD)		WEMT6
TUMT5
TUMT5
TUMT6		-- Yes
2 --QS5U28(P+SBD)TSMT5QS5U12(N+SBD)
QS5U13(N+SBD)
QS5U16(N+SBD)
QS5U17(N+SBD)		TSMT5
TSMT5
TSMT5
TSMT5		-- Yes
4 0.7 ------US5U35(P+SBD)TUMT5 Yes
1 ----QS6U24(P+SBD)TSMT6-- Yes
1.4 ----ES6U3(N+SBD)
US5U2(N+SBD)		WEMT6
TUMT5		-- Yes
2 ----QS5U33(P+SBD)TSMT5-- Yes
(N) means Nch, and (P) means Pch.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Complex Bipolar Transistors[ BIP TR + BIP TR ]
Configuration Package VMT6 EMT5 EMT6 UMT5
(SC-88A)
<SOT-353>		 UMT6
(SC-88)
<SOT-363>		 SMT5
(SC-74A)		 SMT6
(SC-74)
<SOT-457>		 TUMT6 TSMT5 TSMT6 MPT6 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit
diagram
(TOP View)
PNP+PNP Pre Amp. VT6T2 - - - - - - -50
 -0.1 120～560 Yes
- EMT1 UMT1N IMT1A - - - -50
 -0.15 120～560 Yes
VT6T1 - - - - - - -20
 -0.2 120～560 Yes
- EMT18 UMT18N IMT18 - - - -12
 -0.5 270～680 Yes
- - - IMT17 - - - -50
 -0.5 120～390 Yes
- - - - - - MP6T12 -50
 -1 180～450 Yes
- - - - - - MP6T13 -50
 -3 180～450 Yes
- - - IMT2A - - - -50
 -0.15 120～560 Yes
- EMT2 UMT2N - - - - -50
 -0.15 120～560 Yes
- - - IMT4 - - - -120
 -0.05 180～820 Yes
- - - IMT3A - - - -50
 -0.15 120～560 Yes
- EMT3 - - - - - -50
 -0.15 120～560 Yes
Driver - - - - US6T9 QST9 - -30
 -1 270～680 Yes
- - - - US6T8 QST8 - -12
 -1.5 270～680 Yes
Suitable for current mirror circuit VT6T12 - - - - - - -50
 -0.1 120～560 Yes
VT6T11 - - - - - - -20
 -0.2 120～560 Yes
NPN+NPN Pre Amp. - EMX1 UMX1N IMX1 - - - 50
 0.15 120～560 Yes
- EMX26 - - - - - 50
 0.15 820～2700 Yes
- - - IMX25 - - - 20
 0.3 820～2700 Yes
- EMX28 - - - - - 30
 0.4 270～680 Yes
- EMX18 UMX18N - - - - 12
 0.5 270～680 Yes
- - - IMX9 - - - 20
 0.5 560～2700 Yes
- - - IMX17 - - - 50
 0.5 120～390 Yes
- - - - - - MP6X12 50
 1 180～450 Yes
- - - - - - MP6X13 50
 3 180～450 Yes
- - - IMX2 - - - 50
 0.15 120～560 Yes
- EMX2 UMX2N - - - - 50
 0.15 120～560 Yes
- - - IMX8 - - - 120
 0.05 180～820 Yes
- - - IMX3 - - - 50
 0.15 120～560 Yes
- EMX3 UMX3N - - - - 50
 0.15 120～560 Yes
High Frequency - - - IMX5 - - - 11
 0.05 56～120 Yes
- - - IMX4 - - - 20
 0.05 56～180 Yes
- - UMX21N - - - - 6
 0.05 180～560 Yes
- EMX5 UMX5N - - - - 11
 0.05 56～120 Yes
- EMX4 UMX4N - - - - 20
 0.05 56～180 Yes
Driver - - - - US6X8 QSX8 - 30
 1 270～680 Yes
- - - - US6X7 QSX7 - 12
 1.5 270～680 Yes
Suitable for current mirror circuit VT6X2 - - - - - - 50
 0.1 120～560 Yes
VT6X1 - - - - - - 20
 0.2 120～560 Yes
VT6X12 - - - - - - 50
 0.1 120～560 Yes
VT6X11 - - - - - - 20
 0.2 120～560 Yes
NPN+PNP Amplifier - - - FMY1A - - - -50
50		 -0.15 120～560 Yes
- EMY1 UMY1N - - - - -50
50		 -0.15 120～560 Yes
Inverter Driver - - - FMY4A - - - -50
50		 -0.15 120～560 Yes
Pre Amp. VT6Z2 - - - - - - -50
50		 -0.1 120～560 Yes
VT6Z1 - - - - - - -20
20		 -0.2 120～560 Yes
- - - IMZ1A - - - 50
50		 0.15 120～560 Yes
- - - IMZ4 - - - 32
32		 0.5 180～390 Yes
- EMZ1 UMZ1N - - - - 50
50		 0.15 120～560 Yes
- EMZ7 - - - - - 12
12		 0.5 270～680 Yes
- - - - - - MP6Z12 50
50		 1 180～450 Yes
- EMZ8 - - - - - -12
50		 -0.5 270～680 Yes
- - - IMZ2A - - - -50
50		 -0.15 120～560 Yes
- EMZ2 UMZ2N - - - - -50
50		 -0.15 120～560 Yes
DC-DC Converter - - - - - QSZ2 - -30
30		 -1.5 270～680 Yes
- - - - - QSZ1 - -12
12		 -2 270～680 Yes
- - - - - QSZ4 - -30
30		 -2 270～680 Yes
- - - - - QSZ3 - -12
12		 -3 270～680 Yes
- - - - - QS5Y2 - -50
50		 -3 180～450 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
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Complex Bipolar Transistors[ MOSFET ＋ BIP TR ] ／ [ BIP TR ＋ MOSFET ]
Configuration Package EMT6 UMT6
(SC-88)
<SOT-363>		 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit diagram
(TOP View)
BIP_PNP+MOS_Nch Power Manegement EMF6 UMF6N -12
30		 -0.5 270～680 Yes
BIP_NPN+MOS_Nch Power Manegement EMF9 UMF9N 12
30		 0.5 270～680 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Complex Bipolar Transistors[ BIP TR ＋ DTR ] ／ [ DTR ＋ BIP TR ]
Configuration Package EMT6 UMT6
(SC-88)
<SOT-363>		 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit diagram
(TOP View)
BIP_PNP+DTR_NPN Power Manegement - UMF28N -50
50		 -0.15 180～390 Yes
EMF5 UMF5N -12
50		 -0.5 270～680 Yes
BIP_NPN+DTR_NPN Power Manegement EMF8 UMF8N 12
50		 0.5 270～680 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
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Complex Bipolar Transistors[ BIP TR + Diode ] / [ Diode + BIP TR ]
Configuration Package EMT6 UMT5
(SC-88A)
<SOT-353>		 UMT6
(SC-88)
<SOT-363>		 SMT5
(SC-74A)		 TUMT5 TSMT5 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit diagram
(TOP View)
BIP_PNP+Di DC-DC Converter - UML1N - - - -50
 -0.15 120～560 Yes
- UML4N - - - -12
 -0.5 270～680 Yes
- - FML9 - - -12
 -1.5 270～680 Yes
- - - - QSL11 -30
 -1 270～680 Yes
- - - US5L9 QSL9 -12
 -1.5 270～680 Yes
BIP_NPN+Di DC-DC Converter - UML2N - - - 50
 0.15 120～560 Yes
- UML6N - - - 12
 0.5 270～680 Yes
- - FML10 - - 12
 1.5 270～680 Yes
- - - US5L12 QSL12 30
 1 270～680 Yes
- - - US5L10 QSL10 12
 1.5 270～680 Yes
Shunt Regulator EML22 UML23N - - - 50
Vz
6.8
 0.15
Iz
5		 120～270 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
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Complex Bipolar Transistors[ MOSFET + DTR ] / [ DTR + MOSFET ]
Configuration Package EMT6 UMT6
(SC-88)
<SOT-363>		 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit diagram
(TOP View)
DTR_PNP+MOS_Nch Power Manegement EMF32 UMF32N -50
30		 -0.1 100～600 Yes
EMF33 - -12
30		 -0.5 140～ Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
"MOSFET" might cause chip aging and breakdown under the large electrified environment. Please consider to design with ESD protection circuit.
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Complex Bipolar Transistors[ DTR + Diode ] / [ Diode + DTR ]
Configuration Package EMT5 EMT6 VCEO
(V)		 IC
(A)		 hFE*2 RoHS
Application Equivalent
circuit diagram
(TOP View)
DTR_PNP+Di DC-DC Converter EML17 -50
30		 0.1 68～250 Yes
DTR_NPN+Di DC-DC Converter EML20 50
30		 0.1 80～250 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.
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Complex Digital Transistors[ DTR + DTR ] / [ DTR + DTR ]
Configuration Package EMT5 EMT6 UMT5
(SC-88A)
<SOT-353>		 UMT6
(SC-88)
<SOT-363>		 SMT5
(SC-74A)		 SMT6
(SC-74)
<SOT-457>		 TUMT6 TSMT6 MPT6 Eqivalent
element
transistors		 VCC
(VCEO)
(V)		 IO
(IC)
(A)		 GI
(hFE)		 RoHS
対応
Application Equivalent
circuit diagram
(TOP View)		 Upper row: Tr1
The lower: Tr2
PNP+PNP Potentional divider type - UMA9N - - - - DTA114E×2 -50
 -0.1
 30～
-		 Yes
- UMA1N - - - - DTA124E×2 -50
 -0.1
 56～
-		 Yes
EMA2 UMA2N - - - - DTA144E×2 -50
 -0.1
 68～
-		 Yes
Leak asorption type EMA5 UMA5N - - - - DTA123J×2 -50
 -0.1
 80～
-		 Yes
Potentional divider type - - FMA9A - - - DTA114E×2 -50
 -0.1
 30～
-		 Yes
- - FMA1A - - - DTA124E×2 -50
 -0.1
 56～
-		 Yes
- - FMA2A - - - DTA144E×2 -50
 -0.1
 68～
-		 Yes
Leak asorption type - - FMA5A - - - DTA123J×2 -50
 -0.1
 80～
-		 Yes
Input resistor type EMA4 UMA4N - - - - DTA114T×2 -50
 -0.1
 100～600
-		 Yes
EMA3 UMA3N - - - - DTA143T×2 -50
 -0.1
 100～600
-		 Yes
Input resistor type - - FMA4A - - - DTA114T×2 -50
 -0.1
 100～600
-		 Yes
- - FMA3A - - - DTA143T×2 -50
 -0.1
 100～600
-		 Yes
Potentional divider type EMB11 UMB11N IMB11A - - - DTA114E×2 -50
 -0.1
 30～
-		 Yes
EMB2 UMB2N IMB2A - - - DTA144E×2 -50
 -0.1
 68～
-		 Yes
Leak asorption type EMB10 UMB10N IMB10A - - - DTA123J×2 -50
 -0.1
 80～
-		 Yes
Potentional divider type EMB6 UMB6N - - - - DTA144E×2 -50
 -0.1
 68～
-		 Yes
Input resistor type EMB3 UMB3N IMB3A - - - DTA143T×2 -50
 -0.1
 100～600
-		 Yes
NPN+NPN Potentional divider type EMG9 UMG9N - - - - DTC114E×2 50
 0.1
 30～
-		 Yes
EMG1 UMG1N - - - - DTC124E×2 50
 0.1
 56～
-		 Yes
EMG2 UMG2N - - - - DTC144E×2 50
 0.1
 68～
-		 Yes
Potentional divider type - - FMG9A - - - DTC114E×2 50
 0.1
 30～
-		 Yes
- - FMG1A - - - DTC124E×2 50
 0.1
 56～
-		 Yes
- - FMG2A - - - DTC144E×2 50
 0.1
 68～
-		 Yes
Input resistor type EMG4 UMG4N - - - - DTC114T×2 50
 0.1
 100～600
-		 Yes
EMG3 UMG3N - - - - DTC143T×2 50
 0.1
 100～600
-		 Yes
EMG6 UMG6N - - - - DTC144T×2 50
 0.1
 100～600
-		 Yes
Input resistor type - - FMG4A - - - DTC114T×2 50
 0.1
 100～600
-		 Yes
- - FMG3A - - - DTC143T×2 50
 0.1
 100～600
-		 Yes
- - FMG6A - - - DTC144T×2 50
 0.1
 100～600
-		 Yes
Potentional divider type EMH11 UMH11N IMH11A - - - DTC114E×2 50
 0.1
 30～
-		 Yes
EMH1 UMH1N IMH1A - - - DTC124E×2 50
 0.1
 56～
-		 Yes
EMH2 UMH2N IMH2A - - - DTC144E×2 50
 0.1
 68～
-		 Yes
Leak asorption type EMH9 UMH9N IMH9A - - - DTC114Y×2 50
 0.1
 68～
-		 Yes
Potentional divider type - UMH5N - - - - DTC124E×2 50
 0.1
 56～
-		 Yes
EMH6 UMH6N - - - - DTC144E×2 50
 0.1
 68～
-		 Yes
Potentional divider type - - IMH5A - - - DTC124E×2 50
 0.1
 56～
-		 Yes
- - IMH6A - - - DTC144E×2 50
 0.1
 68～
-		 Yes
Input resistor type EMH4 UMH4N IMH4A - - - DTC114T×2 50
 0.1
 100～600
-		 Yes
EMH3 UMH3N IMH3A - - - DTC143T×2 50
 0.1
 100～600
-		 Yes
EMH15 - IMH15A - - - DTC144T×2 50
 0.1
 100～600
-		 Yes
- - IMH21 - - - DTC614T×2 20
 0.6
 820～2700
-		 Yes
- - IMH23 US6H23 - - DTC643T×2 20
 0.6
 820～2700
-		 Yes
Input resistor type - UMH8N - - - - DTC114T×2 50
 0.1
 100～600
-		 Yes
- UMH14N - - - - DTC144T×2 50
 0.1
 100～600
-		 Yes
Input resistor type - - IMH8A - - - DTC114T×2 50
 0.1
 100～600
-		 Yes
- - IMH14A - - - DTC144T×2 50
 0.1
 100～600
-		 Yes
Input resistor type - - - - QSH29 - DTDG14GP×2 60±10
 0.5
 500～
-		 Yes
Driver - - - - - MP6H1 DTDG01GP×2 60±10
 1
 300～
-		 Yes
PNP+NPN Potentional divider type EMD3 UMD3N - - - - DTA114E×DTC114E 50
-50		 0.1
-0.1		 30～
30～		 Yes
EMD2 UMD2N - - - - DTA124E×DTC124E 50
 0.1
 56～
-		 Yes
EMD12 UMD12N - - - - DTA144E×DTC144E 50
-50		 0.1
-0.1		 68～
68～		 Yes
Leak asorption type EMD38 - - - - - DTA113Z×DTC114Y 50
-50		 0.1
-0.1		 68～
33～		 Yes
EMD9 UMD9N - - - - DTA114Y×DTC114Y 50
-50		 0.1
-0.1		 68～
68～		 Yes
EMD4 UMD4N - - - - DTA114Y×DTC144E 50
-50		 0.1
-0.1		 68～
68～		 Yes
EMD5 UMD5N - - - - DTA143X×DTC144E 50
-50		 0.1
-0.1		 68～
30～		 Yes
EMD22 UMD22N - - - - DTA143Z×DTC143Z 50
-50		 0.1
-0.1		 80～
80～		 Yes
Potentional divider type - - IMD3A - - - DTA114E×DTC114E 50
-50		 0.1
-0.1		 30～
30～		 Yes
- - IMD2A - - - DTA124E×DTC124E 50
-50		 0.1
-0.1		 56～
56～		 Yes
Leak asorption type - - IMD9A - - - DTA114Y×DTC114Y 50
-50		 0.1
-0.1		 68～
68～		 Yes
Input resistor type EMD6 UMD6N - - - - DTA143T×DTC143T 50
-50		 0.1
-0.1		 100～600
～600		 Yes
Input resistor type - - IMD6A - - - DTA143T×DTC143T 50
-50		 0.1
-0.1		 100～600
～600		 Yes
Power management EMD29 - - - - - DTB513Z×DTC114E -12
50		 -0.5
0.1		 140～
30～		 Yes
EMD30 - - - - - DTB713Z×DTC114E -30
50		 0.2
0.1		 140～
30～		 Yes
Power management - - IMD10A - - - - ×DTC114T -50
50		 -0.5
0.1		 68～
-		 Yes
- - IMD16A - - - - ×DTC115T -50
50		 -0.5
0.1		 82～
-		 Yes
* No.1 Pin is located on the lower left of equivalent circuite diagram for VMT6,EMT5,EMT6,UMT5,UMT6,TUMT5,TUMT6,TSMT5,TSMT6 and MPT6 packages.
* No.1 Pin is located on the lower right of equivalent circuite diagram for SMT5 and SMT6 packages.

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