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Low VCE(sat) Transistor

US6X6

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Outline

US6X6 Outline

TUMT6

Dimensions

US6X6 Dimensions

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Equivalent circuit diagram

US6X6 Equivalent circuit diagram

[ Product description ]

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Features

Low VCE(sat)

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Collector-Base voltage VCBO(V) 30  
Collector-Emitter voltage VCEO(V) 30  
Emitter-Base voltage VEBO(V) 6  
Collector current(continuous) IC(A) 1.5  
Collector current(pulse) ICP(A) 3 Pw=1ms,Single pulse
Collector Power dissipation PC(W) 0.4 Each terminal mounted on a recommended land pattern
Junction temperature Tj(°C) 150  
Storage temterature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
US6X6TR TUMT6 Active Yes taping 3000 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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