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High gain amplifier Transistor(Darlington)

2SD1980

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Outline

2SD1980 Outline

CPT3

Dimensions

2SD1980 Dimensions

* Click to enlarge.

Equivalent circuit diagram

2SD1980 Equivalent circuit diagram

[ Product description ]

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Features

Surface-mount bipolar transistor power amplification

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters Standard value Conditions
Collector-Base voltage VCBO(V) 100  
Collector-Emitter voltage VCEO(V) 100  
Emitter-Base voltage VEBO(V) 6  
Collector current(continuous) IC(A) 2  
Collector current(pulse) ICP(A) 3  
Collector Power dissipation PC(W) 1 Ta=25 deg.
Junction temperature Tj(°C) 150  
Storage temterature Tstg(°C) -55 to +150  

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.



Status Product

Part No. Package Status
*		 RoHS Packing
style		 Package
quantity		 Sales Distribution
Inventory
2SD1980TL CPT3/SC-63/SOT-428
@ROHM/JEDEC/JEITA		 Active Yes taping 2500 Inquiry

*1 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

*2 Active: Production or current type  Preparation: Preliminary type  Preview: Development type


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