2SB1412 | Bipolar Transistors | Transistors | Discrete Semiconductors

Low V_CE(sat) Transistor

2SB1412

Data Sheet (PDF, 186K)		Design Model SPICE
Reliability information	Operation notes	Condition of soldering

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Outline

2SB1412 Outline

CPT3

Dimensions

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Equivalent circuit diagram

2SB1412 Equivalent circuit diagram

[ Product description ]

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Features

Low V_CE(sat)

Product specifications

Absolute maximum ratings (Ta=25ºC)
Rated parameters	Standard value	Conditions
Collector-Base voltage V_CBO(V)	-30
Collector-Emitter voltage V_CEO(V)	-20
Emitter-Base voltage V_EBO(V)	-6
Collector current(continuous) I_C(A)	-5
Collector current(pulse) I_CP(A)	-10	Pw=10ms,Single pulse
Collector Power dissipation P_C(W)	1
Junction temperature Tj(ºC)	150
Storage temterature Tstg(ºC)	-55 to +150

*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.

Status Product

Part No.	Package	Status *1	RoHS	Packing style	Package quantity	Samples *2	Sales
2SB1412TLQ	CPT3/SC-63/SOT-428 @ROHM/JEDEC/JEITA	Active	Yes	taping	2500	Purchase	Inquiry