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SiC Power Devices

SiC Schottky Barrier Diodes (Summary table of characteristics)

16 item(s) hit.

Family Mounting
style		 Package
size		 Number
of
terminal		 Repetitive peak
reverse voltage VRM		 Reverse
voltage
VR(V)		 Forward current
surge peak IFSM		 Average rectified
forward current
IF(A)		 Forward
voltage
VF(Max.)(V)		 Reverse
current
IR(Max.)(mA)
  IF(A)   VR(V)
Reset
SCS106AG Leaded type 9.8x15.4(t=4.4) 2 600 600 21 6 1.5 6 0.12 600
SCS108AG Leaded type 9.8x15.4(t=4.4) 2 600 600 29 8 1.5 8 0.16 600
SCS110AG Leaded type 9.8x15.4(t=4.4) 2 600 600 40 10 1.5 10 0.2 600
SCS112AG Leaded type 9.8x15.4(t=4.4) 2 600 600 41 12 1.5 12 0.24 600
SCS120AG Leaded type 9.8x15.4(t=4.4) 2 600 600 76 20 1.5 20 0.4 600
*SCS105KG Leaded type 9.8x15.4(t=4.4) 2 1200 1200 20 5 1.5 5 0.1 1200
*SCS110KG Leaded type 9.8x15.4(t=4.4) 2 1200 1200 40 10 1.5 10 0.2 1200
*SCS120KG Leaded type 9.8x15.4(t=4.4) 2 1200 1200 80 20 1.5 20 0.4 1200
NEW
SCS106AM		 Leaded type 10.2x15.9(t=4.7) 2 600 600 21 6 1.5 6 0.2 600
NEW
SCS108AM		 Leaded type 10.2x15.9(t=4.7) 2 600 600 29 8 1.5 8 0.2 600
NEW
SCS110AM		 Leaded type 10.2x15.9(t=4.7) 2 600 600 40 10 1.5 10 0.2 600
NEW
SCS112AM		 Leaded type 10.2x15.9(t=4.7) 2 600 600 41 12 1.5 12 0.2 600
NEW
SCS120AE2		 Leaded type 15.9x20.95(t=5.03) 3 600 600 *40/80 *10/20 1.5 10 0.2 600
NEW
SCS140AE2		 Leaded type 15.9x20.95(t=5.03) 3 600 600 *76/152 *20/40 1.5 20 0.4 600
NEW
SCS110KE2		 Leaded type 15.9x20.95(t=5.03) 3 1200 1200 *24/48 *5/10 1.5 5 0.1 1200
NEW
SCS120KE2		 Leaded type 15.9x20.95(t=5.03) 3 1200 1200 *45/90 *10/20 1.5 10 0.2 1200

Part number with * are under development. *(Per Leg/Per Device)

NEW! SiC Power Devices

2012.05.17

ROHM Co., Ltd. Japan: winner of Best Paper Award 2012 at PCIM in Nuremberg.

2011.03.30

ROHM Silicon Carbide Schottky Diodes Push the Performance Envelope

2010.05.10

Low Drive Voltage High Efficiency SiC Schottky Barrier Diodes