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SiC Power Devices

SiC Schottky Barrier Diodes

The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. 600V and 1200V products available.

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●SiC Schottky Barrier Diodes

※The circuit diagram is displayed when the pointer is put on the type name.
Package(mm) VR(V)600 1200
IO(A)6 8 10 12 20 40 5 10 20

9.8x15.4(t=4.4)		 TO-220AC SCS106AG SCS108AG SCS110AG SCS112AG SCS120AG *SCS105KG *SCS110KG *SCS120KG

10.2x15.9(t=4.7)		 TO-220FM NEW SCS106AM NEW SCS108AM NEW SCS110AM NEW SCS112AM

15.9x20.95(t=5.03)		 TO-247 NEW SCS120AE2 NEW SCS140AE2 NEW SCS110KE2 NEW SCS120KE2
Part number with * are under development.

NEW! SiC Power Devices

2012.05.17

ROHM Co., Ltd. Japan: winner of Best Paper Award 2012 at PCIM in Nuremberg.

2011.03.30

ROHM Silicon Carbide Schottky Diodes Push the Performance Envelope

2010.05.10

Low Drive Voltage High Efficiency SiC Schottky Barrier Diodes