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SiC Power Devices

SiC MOSFET (Summary table of characteristics)

2 item(s) hit.

Part
number		 Mounting
style		 Package
size		 Number
of
terminal		 Polarity
Term explanation		 Drain-Source
voltage
VDSS(V)
Term explanation		 Static Drain-Source
on-state
resistance
RDS(on)(Typ.)(Ω)
Term explanation		 Drive
voltage
(V)
Term explanation
VGS=18V
Reset    
*SCH2200AX Leaded type 15.99x10.5(t=4.7) 3 N 600 0.2 18
*SCH2080KE Leaded type 15.9x20.95(t=5.03) 3 N 1200 0.09 18

Part number with * are under development.

NEW! SiC Power Devices

2012.05.17

ROHM Co., Ltd. Japan: winner of Best Paper Award 2012 at PCIM in Nuremberg.

2011.03.30

ROHM Silicon Carbide Schottky Diodes Push the Performance Envelope

2010.05.10

Low Drive Voltage High Efficiency SiC Schottky Barrier Diodes