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SiC Power Devices

SiC MOSFET

High-speed switching is possible. In particular, ON resistance is low even at high temperatures, minimizing switching and conduction losses.
The lineup is currently being expanded, optimized for next-generation devices.



Product List
18VDrive　
Package VDSS(V) 600 1200
ID(A) Number
of
terminal		 Number
of
terminal

TO-220FM

to-220fm
10 *SCH2200AX(N) 3 - -

TO-247

to-247
35 - - *SCH2080KE(N) 3
Part number with * are under development.
(N) means Nch, and (P) means Pch.

NEW! SiC Power Devices

2012.05.17

ROHM Co., Ltd. Japan: winner of Best Paper Award 2012 at PCIM in Nuremberg.

2011.03.30

ROHM Silicon Carbide Schottky Diodes Push the Performance Envelope

2010.05.10

Low Drive Voltage High Efficiency SiC Schottky Barrier Diodes