SiC Power Devices

Next-generation SiC (Silicon Carbide) products feature lower switching, resulting in superior operating characteristics at high temperatures.
Ideal for use as key devices in a variety of applications, including inverters in industrial equipment and ACs and charge blocks for electric cars and solar/wind generation.

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The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, SiC devicces maintain constant characteristics, resulting in better performance.

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In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.