ROHM ECOMOS™ Efficiently Handles Reduced Supply Voltages in Portables

Advanced, proprietary process yields dramatic improvement in on-resistance at very low gate drive voltage; small footprint, low-profile packages require less board space

SAN DIEGO, Calif. – December 8, 2009 –The new ECOMOS™ series of n-channel and p-channel MOSFETs from ROHM Semiconductor are designed to meet the prescribed  operation at lower gate drive voltages that emerging generations of portable electronic devices require. ROHM's advanced proprietary processing has produced devices that exhibit R_DS(ON) values as much as 90% lower than comparable devices when operated at ultra-low 1.5V or 1.2V gate drive (V_GS) voltages. This improved electrical performance combined with ROHM's unique packaging design provides both high-efficiency, excellent power dissipation and small device footprint.
The new ECOMOS™ 1.5V products are offered in three package sizes depending on maximum power dissipation (P_D) in configurations that include single p-channel or n-channel devices (with or without Schottky barrier diode) and complex, multi-die dual p-channel or n-channel devices. The three package sizes with salient specifications* are:

• WEMT6 : 1.8×1.6×0.8mm (1613), P_D(MAX) = 0.8W
• TSST8   : 3.0×1.9×0.8mm (3016), P_D(MAX) = 1.25W
• TSMT8   : 3.0×2.8×0.8mm (3024), P_D(MAX) = 1.5W

According to Kevin Turchin, Field Application Engineering Manager, "ROHM Semiconductor is a leader in semiconductor fabrication technology. We design and manufacture our own equipment and processes. The advanced fabrication techniques we developed for ECOMOS™ have resulted in dramatic improvement in R_DS(ON), particularly when low gate drive voltages are required. This process has also yielded parts with reduced die size making it possible to offer devices in smaller, lower-profile packages."