Compact, High-Power Package for Dual-Element MOSFETs: MPT6 (4540(1816) size)
04.20.2007
ROHM has recently developed a new dual-element, low ON-resistance MOSFET series featuring all of the characteristics of SOP8 products (5060(2024) size, 2W, t=1.75mm) in a thinner, more compact design (MPT6, 4540(1816) size, t=1mm). Both mounting area and thickness are reduced by 40%, increasing design flexibility and making them ideal for use in the power switches and motor drivers of compact devices, such as car navigation systems, portable DVD players, notebook PCs and gaming devices(Sample Price ; 0.85 US$).
· Lineup
| (Ta=25°C) |
| Part Number |
Configuration |
Total Power Dissipation
PD
[W/total] |
Drain-Source Voltage
VDSS
[V] |
Drain Current
ID
[A] |
ON-Resistance (Drain-Source)
RDS(on)*
[mΩ] |
| MP6K61 |
Nch + Nch |
2.0 |
30 |
5 |
40 |
| MP6K62 |
Nch + Nch |
2.0 |
30 |
6 |
27 |
| MP6M63 |
Nch + Pch |
2.0 |
30 |
5 |
40 |
| -30 |
-4.5 |
40 |
|
| *VGS=10V |
· Main Features of the MPT6 Dual MOSFET Series:
- Compact, high power MPT6 package (4540(1816) size: 4.5 × 4.0 × 1.0mm, 2W) reduces mounting area and height by 40% while retaining the same package power as the SOP8 type (5060(2024) size: 5.0 × 6.0 × 1.75mm, 2W)
- Newly developed low ON-resistance elements ensure large current handling capability: ID=6A Max. (MP6K62)
· Terms
- Package Power PD(Total Power Dissipation)
The maximum permissible power consumption [depends on Ta (ambient temperature) and Tc (case surface temperature) ].
- Drain-Source Voltage VDSS
The maximum voltage that can be supplied between the Drain and Source.
- Drain current ID
The maximum current that can be supplied to the Drain.
- Drain-Source On-Resistance RDS(on)
The Drain-Source resistance during power ON.